RJK5015DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1360-0200
Rev.2.00 Apr 18, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)DG1. Gate2. Drain (Flange)3. SourceS123
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 25 A Drain peak current ID (pulse)Note1 75 A Body-drain diode reverse drain current
Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation
Channel to case thermal impedance Channel temperature Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
IDR 25 A IDR (pulse)Note1 75 A IAPNote3 7 A EARNote3 2.7 mJ Pch Note2 150 W θch-c 0.833 °C/W Tch 150 °C Tstg –55 to +150 °C
REJ03G1360-0200 Rev.2.00 Apr 18, 2007
Page 1 of 6
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RJK5015DPK
Electrical Characteristics
(Ta = 25°C)
Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 500 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA
ID = 12.5 A, VGS = 10 V Note4 RDS(on) — 0.21 0.24 Ω Static drain to source on state
resistance
Input capacitance Ciss — 2600 — pF VDS = 25 V Output capacitance Coss — 270 — pF VGS = 0 Reverse transfer capacitance Crss — 32 — pF f = 1 MHz Turn-on delay time td(on) — 42 — ns ID = 12.5 A
VGS = 10 V Rise time tr — 59 — ns RL = 20 Ω Turn-off delay time td(off) — 103 — ns Rg = 10 Ω Fall time t — 45 — ns f
Total gate charge
Gate to source charge Gate to drain charge
Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test
Qg — 66 — nC VDD = 400 V Qgs — 14 — nC VGS = 10 V Qgd — 29 — nC ID = 25 A VDF — 0.96 1.60 V IF = 25 A, VGS = 0 Note4 trr
—
380
—
ns
IF = 25 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 2 of 6
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RJK5015DPK
Main Characteristics
Power vs. Temperature Derating40010001001 mMaximum Safe Operation AreaTa = 25°C10Channel Dissipation Pch (W)Drain Current ID (A)300 µ101PW = 10 ms(1shot)s10s0 µs200100Operation in this area is limited by 0.1RDS(on)DC Operation (Tc = 25°C)0501001502000.010.11101001000Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Typical Output Characteristics50Pulse Test8 V, 9 V10 V4030205.6 V105.4 V6.4 V100506.2 V6 V5.8 VTypical Transfer CharacteristicsVDS = 10 VPulse TestDrain Current ID (A)Drain Current ID (A)20105210.50.20.1024Tc = 75°C25°C−25°C6810VGS = 5.2 V048121620Drain to Source Voltage VDS (V)Static Drain to Source on State Resistance vs. Drain CurrentDrain to Source on State Resistance RDS(on) (Ω)10.50.20.10.05VGS = 10 VGate to Source Voltage VGS (V)Static Drain to Source on State Resistance vs. Temperature0.50.4ID = 25 A0.30.20.1Pulse Test0−250255075100125150VGS = 10 V12.5 A5 A0.020.01131030Pulse Test1003001000Static Drain to Source on State Resistance RDS(on) (Ω)Drain Current ID (A)Case Temperature Tc (°C)
REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 3 of 6
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RJK5015DPK
Body-Drain Diode Reverse Recovery Time100010000030000 Typical Capacitance vs.Drain to Source VoltageVGS = 0f = 1 MHzCissReverse Recovery Time trr (ns)500Capacitance C (pF)2001005020105211310di / dt = 100 A / µsVGS = 0, Ta = 25°C301003001000100003000100030010030100100CossCrss200300Reverse Drain Current IDR (A)Drain to Source Voltage VDS (V)Reverse Drain Current vs.Source to Drain VoltageGate to Source Voltage VGS (V)1650Dynamic Input CharacteristicsDrain to Source Voltage VDS (V)800Reverse Drain Current IDR (A)ID = 25 AVDD = 100 V250 V400 VVDSVGSPulse Test60012403040082010200VDD = 400 V250 V100 V2040608045 V, 10 VVGS = 0 V, −5 V0.81.21.62.00010000.4Gate Charge Qg (nC)Gate to Source Cutoff Voltagevs. Case Temperature5ID = 10 mA4321VDS = 10 V0-2502550751001251501 mASource to Drain Voltage VSD (V)Gate to Source Cutoff Voltage VGS(off) (V)0.1 mACase Temperature Tc (°C)
REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 4 of 6
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RJK5015DPK
Normalized Transient Thermal Impedance vs. Pulse WidthNormalized Transient Thermal Impedance γ s (t)3Tc = 25°C1D = 10.50.30.20.10.1θch – c (t) = γ s (t) • θch – cθch – c = 0.833°C/W, Tc = 25°CPDMPWT0.05D =0.030.0210.0PWT0.0110 µ100 µ1 m10 m100 m110Pulse Width PW (s)Switching Time Test CircuitVin MonitorD.U.T.RL10 ΩVin10 VVDD= 250 VVinVout10%10%VoutMonitorWaveform90%10%90%td(on)tr90%td(off)tf
REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 5 of 6
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RJK5015DPK
Package Dimensions
Package NameTO-3PJEITA Package CodeSC-65RENESAS CodePRSS0004ZE-APrevious CodeTO-3P / TO-3PVMASS[Typ.]5.0g5.0 ± 0.3Unit: mm1.515.6 ± 0.34.8 ± 0.20.51.0φ3.2 ± 0.214.9 ± 0.219.9 ± 0.21.61.4 Max2.02.82.01.0 ± 0.23.60.91.018.0 ± 0.50.6 ± 0.25.45 ± 0.55.45 ± 0.50.3
Ordering Information
Part No.
RJK5015DPK-00-T0
Quantity
360 pcs
Box (Tube)
Shipping Container
REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 6 of 6
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