In-situ deposition of film stacks

专利名称：In-situ deposition of film stacks

发明人：Jason Haverkamp,Pramod Subramonium,Joe

Womack,Dong Niu,Keith Fox,JohnAlexy,Patrick Breiling,Jennifer

O'Loughlin,Mandyam Sriram,George AndrewAntonelli,Bart van Schravendijk

申请号：US12970846申请日：20101216公开号：US08741394B2公开日：20140603

专利附图：

摘要：Methods for depositing film stacks by plasma enhanced chemical vapordeposition are described. In one example, a method for depositing a film stack on asubstrate, wherein the film stack includes films of different compositions and the

deposition is performed in a process station in-situ, is provided. The method includes, in afirst plasma-activated film deposition phase, depositing a first layer of film having a firstfilm composition on the substrate; in a second plasma-activated deposition phase,depositing a second layer of film having a second film composition on the first layer offilm; and sustaining the plasma while transitioning a composition of the plasma from thefirst plasma-activated film deposition phase to the second plasma-activated filmdeposition phase.

申请人：Jason Haverkamp,Pramod Subramonium,Joe Womack,Dong Niu,Keith Fox,JohnAlexy,Patrick Breiling,Jennifer O'Loughlin,Mandyam Sriram,George Andrew Antonelli,Bartvan Schravendijk

地址：Clifton Park NY US,Beaverton OR US,Tigard OR US,West Linn OR US,Tigard ORUS,West Linn OR US,Portland OR US,Portland OR US,Beaverton OR US,Portland ORUS,Sunnyvale CA US

国籍：US,US,US,US,US,US,US,US,US,US,US

代理机构：Weaver Austin Villeneuve & Sampson LLP

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