MMBTA43贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT–23 MMBTA43 TRANSISTOR (NPN) FEATURES  High Voltage Application  Telephone Application  Complementary to MMBTA93 MARKING:ABX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 200 5 500 350 357 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO Test conditions IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 Min 200 200 5 40 40 40 50 Typ Max 0.5 0.9 4 Unit V V V V V MHz pF hFE(1)* VCE=10V, IC=10mA hFE(2)* VCE=10V, IC=1mA hFE(3)* VCE=10V, IC=30mA VCE(sat)* IC=20mA, IB=2mA VBE(sat)* fT Cob IC=20mA, IB=2mA VCE=20V,IE=10mA, f=100MHz VCB=20V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. A,Oct,2010 【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cn

SymbolAA1A2bcDEE1ee1LL1θDimensions In MillimetersMin.Max.0.9001.1500.0000.1000.9001.0500.3000.5000.0800.1502.8003.0001.2001.4002.2502.5500.950 TYP.1.8002.0000.550 REF.0.3000.5000°8°Dimensions In InchesMin.Max.0.0350.0450.0000.0040.0350.0410.0120.0200.0030.0060.1100.1180.0470.0550.0890.1000.037 TYP.0.0710.0790.022 REF.0.0120.0200°8°

The bottom gasket

Label on the Reel 3000×15 PCS

3000×1 PCS

The top gasket

Stamp “EMPTY” on the empty box

Seal the box with the tape Seal the box with the tape QA Label

Label on the Inner Box

Inner Box: 210 mm× 208 mm×203 mm

Label on the Outer Box

Outer Box: 440 mm× 440 mm× 230 mm