Method of forming self-aligned contact structures

专利名称：Method of forming self-aligned contact

structures in semiconductor integratedcircuit devices

发明人：Kim, Yun-Gi,Park, Dong-Gun,Park, Jong-Woo申请号：EP00304870.9申请日：20000608公开号：EP1122772A3公开日：20030312

专利附图：

摘要：Method of forming integrated circuit devices (e.g., memory devices) include theuse of preferred self-aligned contact hole fabrication steps. These steps improve process

reliability by reducing the likelihood that contact holes will become misaligned tounderlying integrated circuit device structures and thereby potentially expose thestructures in an adverse manner. Typical methods include the steps of forming a pluralityof interconnection patterns (22) on a substrate (1) and then covering a surface of theinterconnection patterns and a portion of the substrate with a capping insulating layer(24) such as silicon nitride layer. The capping insulating layer is then covered with anupper interlayer insulating layer (26) different from the capping insulating layer (24). Theupper interlayer insulating layer (26) and the capping insulating layer (24) are then dry-etched in sequence to form a first narrow contact hole (32) that exposes the substrate(1), but preferably does not expose the interconnection patterns (22). The first contacthole (32) is then widened in a self-aligned manner using the capping insulating layer as anetch-stop layer. This widening step is performed by wet etching sidewalls of the firstcontact hole (32) using an etchant that etches the upper interlayer insulating layer (26)faster than the capping insulating layer (24). In this manner, the first contact hole (32) maybe formed to initially compensate for potential misalignment errors and then a self-aligned wet etching step may be performed to widen the first contact hole (32) into asecond contact hole (32a) so that a low resistance contact (38) (e.g., a contact plug) canbe provided therein.

申请人：SAMSUNG ELECTRONICS CO. LTD.

地址：416 Maetan-dong, Kwonsun-gu Suwon-city, Kyungki-do KR

国籍：KR

代理机构：Mounteney, Simon James

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