Method for growing a single crystal of compound se

专利名称：Method for growing a single crystal of

compound semiconductor

发明人：Morioka, Mikio c/o Itami Works,Shimizu,

Atsushi c/o Itami Works

申请号：EP85304484.0申请日：19850624公开号：EP0172621A2公开日：19860226

摘要：Highly impurity doped single crystal often suffers from impurity precipitation.The cause of the occurrence of impurity precipitation is supposed to be the supercooling.To avoid the occurrence of supercooling the pulling speed is slowly lowered during thecrystal growth in the LEC methods. The beginning of the occurrence of impurity

precipitation is delayed by lowering the pulling speed. Additional application of magneticfield is more effective.

申请人：SUMITOMO ELECTRIC INDUSTRIES LIMITED

地址：No. 15, Kitahama 5-chome, Higashi-ku Osaka-shi, Osaka 1 JP

国籍：JP

代理机构：Evans, David Charles

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