Method for manufacturing a hybrid integrated circu

专利名称：Method for manufacturing a hybrid

integrated circuit device

发明人：Kenji Nagashima,Hiroshi

Matsumoto,Masataka Tanaka,HirosiOodaira,Nobuo Iwase

申请号：US06/3415申请日：19820121公开号：US04412377A公开日：19831101

摘要：A method for manufacturing a hybrid integrated circuit device comprising a stepof forming an Al.sub.2 O.sub.3 layer on a metal substrate, a step of forming on theAl.sub.2 O.sub.3 layer a resist layer having a pattern opposite to that of a copper layerwhich will be formed on the Al.sub.2 O.sub.3 layer by a later step, a step of forming thecopper layer on the Al.sub.2 O.sub.3 layer using the resist layer as a mask, a step ofimpregnating thermosetting material into both the Al.sub. 2 O.sub.3 layer and the copperlayer, and a step of providing at least one semiconductor element on the copper layer.

申请人：TOKYO SHIBAURA DENKI KABUSHIKI KAISHA

代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner

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