专利名称：METHOD OF MAKING INTEGRATED CIRCUIT
EMBEDDED WITH NON-VOLATILEPROGRAMMABLE MEMORY HAVINGVARIABLE COUPLING
发明人：David Liu,John Nicholas Gross申请号：US14048534申请日：20131008
公开号：US20140065772A1公开日：20140306
专利附图：
摘要：A programmable non-volatile device is made with a floating gate that functions
as a FET gate that overlaps a portion of a source/drain region and allows for variablecoupling through geometry and/or biasing conditions. This allows a programmingvoltage for the device to be imparted to the floating gate through variable capacitivecoupling, thus changing the state of the device. Multi-state embodiments are alsopossible. The invention can be used in environments such as data encryption, referencetrimming, manufacturing ID, security ID, and many other applications.
申请人：INVENSAS CORPORATION
地址：San Jose CA US
国籍：US
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