专利名称:Thin film of oxide superconductor
possessing locally different crystalorientations and processes for preparingthe same
发明人:Hiroshi Inada,Michitomo Iiyama申请号:US08/201080申请日:19940224公开号:US0812A公开日:19951107
摘要:A thin film of oxide superconductor consisting of more than two portions (10,11, 12) each possessing a predetermined crystal orientation and deposited on a commonsurface of a substrate (2). At least one selected portion (10) of the thin film of oxidesuperconductor is deposited on a thin under-layer (4, 100) which facilitates crystal growthof the selected portion and which is deposited previously on the substrate. The selectedportions (10) may consist of a-axis oriented thin film portions while non-selected portions(11, 12) may consists of c-axis oriented thin film portions. The thin under-layer can be abuffer layer (4) or a very thin film (100) of oxide superconductor.
申请人:SUMITOMO ELECTRIC INDUSTRIES, LTD.
代理机构:Beveridge, DeGrandi, Weilacher & Young
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