专利名称：Memory and Method of Fabricating the
Same
发明人：Kuo-Pin Chang,Erh-Kun Lai申请号：US12581219申请日：20091019
公开号：US20110089393A1公开日：20110421
专利附图：
摘要：A memory, comprising a metal portion, a first metal layer and second metaloxide layer is provided. The first metal oxide layer is on the metal element, and the firstmetal oxide layer includes N resistance levels. The second metal oxide layer is on the firstmetal oxide layer, and the second metal oxide layer includes M resistance levels. Thememory has X resistance levels and X is less than the summation of M and N, forminimizing a programming disturbance.
申请人：Kuo-Pin Chang,Erh-Kun Lai
地址：Yuanli Township TW,Taichung County TW
国籍：TW,TW
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